Title :
Poly gate depletion effects on NMOS hot carrier reliability
Author :
Aur, S. ; Chapman, A.A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report the poly depletion effects on hot carrier reliability. Although the poly depletion has been reported to improve the time dependent dielectric breakdown, we have found that the hot carrier reliability is worse. This is due to effective oxide thickness increase at measurement condition.<>
Keywords :
electric breakdown of solids; hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; NMOS devices; NMOS hot carrier reliability; effective oxide thickness increase; measurement condition; poly gate depletion effects; time dependent dielectric breakdown; Current measurement; Degradation; Dielectric breakdown; Doping; Hot carriers; Implants; Instruments; MOS devices; Stress measurement; Voltage;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324416
