Title :
A modular flash EEPROM technology for 0.8 μm high speed logic circuits
Author :
Chang, Ko-Min ; Cheng, Sunny ; Kuo, Clinton
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
A flash EEPROM technology has been integrated into a 0.8 μm double-metal CMOS high-speed process for custom integrated circuit applications. The modular approach employed effectively decouples the double-poly, thick-oxide flash EEPROM process from the single-poly, thin-oxide host process. The flash EEPROM has a <100-μs byte programming time and a nominal 1-s bulk erasure time. The low threshold voltage of the erased cell permits access without wait states at 3-V supply. This technology has been successfully demonstrated on a 32-b microcontroller with a 32-kbyte flash EEPROM module
Keywords :
CMOS integrated circuits; EPROM; integrated logic circuits; integrated memory circuits; 0.8 micron; 3 V; 32 kbyte; custom integrated circuit applications; double-metal CMOS; double-poly/thick oxide process; high speed logic circuits; modular flash EEPROM technology; programming time; CMOS logic circuits; Dielectric losses; Diodes; EPROM; Etching; Logic circuits; Logic gates; Time measurement; Tunneling; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0015-7
DOI :
10.1109/CICC.1991.164131
