Title :
New hot-carrier degradation mechanisms in 0.25 /spl mu/m PMOSFETs
Author :
Woltjer, R. ; Paulzen, G.M. ; Pomp, H.G. ; Lifka, H. ; Woerlee, P.H.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
PMOSFET hot-carrier reliability is often proposed to he limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.<>
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; 0.25 micron; PMOSFETs; bias conditions; bias-length dependences; deep submicron devices; hot-carrier degradation mechanisms; interface states; negative oxide charge; positive oxide-charge generation; reliability; time dependences; Charge pumps; Degradation; Electrons; Equations; Hot carriers; Interface states; Low voltage; MOSFETs; Power generation; Stress;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324417
