DocumentCode
2091084
Title
Femtosecond x-ray diffraction of structural changes in a semiconductor superlattice
Author
Bargheer, M. ; Zhavoronkov, N. ; Gritsal, Y. ; Woo, Dong Hyuk ; Kim, Dae San ; Elsaesser, Thomas
Author_Institution
Max-orn-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin
fYear
2004
fDate
21-21 May 2004
Firstpage
934
Lastpage
935
Abstract
Femtosecond excitation of spatially modulated electron hole plasmas leads to an ultrafast structural response within the unit cell of GaAs/AlGaAs superlattices. The transient rocking curve reflects the expansion of wells and compression of barriers
Keywords
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; high-speed optical techniques; plasma light propagation; semiconductor superlattices; GaAs-AlGaAs; GaAs/AlGaAs superlattices; barrier compression; femtosecond X-ray diffraction; spatially modulated electron hole plasmas; well expansion;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1367075
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