DocumentCode
2091109
Title
Resist roughness limits in EUV lithography for 1 G to 16 G DRAMs
Author
Scheckler, E.W. ; Ogawa, T. ; Yamanashi, H. ; Soga, T. ; Ito, M.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1994
fDate
7-9 June 1994
Firstpage
139
Lastpage
140
Abstract
Pattern fluctuation in EUV lithography is analyzed using new theoretical models, molecular-scale simulation and experiment. For /spl plusmn/5% 3/spl sigma/ linewidth control in 100 nm PMMA, the dose must exceed 0.18 mJ/cm/sup 2/ for 180 nm lines and 51.8 mJ/cm/sup 2/ for 70 nm lines. Roughness in novolac chemical amplification resists is dependent on the cross-linker density, and the extent of cross-linking. Current resists might be suitable for 4 G DRAMs (120 nm) and cannot be applied to 16 G DRAMs (70 nm) in EUV lithography.<>
Keywords
DRAM chips; VLSI; integrated circuit technology; photoresists; polymer films; 1 to 16 Gbit; 70 to 180 nm; DRAMs; EUV lithography; PMMA; cross-linker density; extreme UV; molecular-scale simulation; novolac chemical amplification resists; pattern fluctuation; resist roughness limits; Absorption; Chemicals; Fluctuations; Indium tin oxide; Laboratories; Lithography; Pattern analysis; Random access memory; Resists; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324418
Filename
324418
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