DocumentCode
2091241
Title
A novel method for extracting the two-dimensional doping profile of a sub-half micron MOSFET
Author
Khalil, N. ; Faricelli, J. ; Bell, D. ; Selberherr, S.
Author_Institution
Digital Equipment Corp., Hudson, MA, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
131
Lastpage
132
Abstract
A novel method for extracting the two-dimensional doping profile of a sub-half micron gate length MOSFET from capacitance measurements is presented. The method is able to resolve the lateral doping profile of a MOSFET, even for very shallow junctions with 0.1 micron lateral extent. It does not require any "heroic" sample preparation and uses measurements easily performed during process characterization, such as gate overlap and source/drain diode capacitances.<>
Keywords
capacitance measurement; doping profiles; insulated gate field effect transistors; ion implantation; 0.1 micron; 2D profile; capacitance measurements; shallow junctions; sub-half micron MOSFET; two-dimensional doping profile; Capacitance measurement; Data mining; Diodes; Doping profiles; Inverse problems; Least squares methods; Length measurement; MOSFET circuits; Microelectronics; Spline;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324422
Filename
324422
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