Title :
A new titanium salicide process (DIET) for sub-quarter micron CMOS
Author :
Horiuchi, T. ; Wakabayashi, H. ; Iskigami, T. ; Nakamura, H. ; Mogami, T. ; Kunio, T. ; Okumura, K.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
This paper describes a new one-step annealing TiSi/sub 2/ process which achieves a 0.2 /spl mu/m line silicidation without causing the agglomeration and uncompleted phase transition failure. The process consists of i) one-step silicidation at over 800/spl deg/C which reduces C49-to-C54 phase transition temperature and ii) TiSi/sub 2/ over-growth control by a thin Ti and pre-amorphized Si reaction.<>
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; metallisation; titanium compounds; 0.2 micron; 800 degC; DIET; TiSi/sub 2/; TiSi/sub 2/ process; overgrowth control; phase transition temperature; pre-amorphized Si reaction; silicidation; sub-quarter micron CMOS; CMOS process; Etching; Implants; National electric code; Rapid thermal annealing; Rapid thermal processing; Silicidation; Temperature control; Titanium; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324427
