• DocumentCode
    2091335
  • Title

    A pulsed S-parameters measurement setup for the non-linear characterization of FETs and bipolar power transistors

  • Author

    Teyssier, J.P. ; Campovecchio, M. ; Sommet, C. ; Portilla, J. ; Quéré, R.

  • Author_Institution
    IRCOM CNRS URA n°356 Université de Limoges (FRANCE), 7 rue Jules Vallÿs 19100 BRIVE
  • fYear
    1993
  • fDate
    6-10 Sept. 1993
  • Firstpage
    489
  • Lastpage
    493
  • Abstract
    A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup as well as the database is made by an object-oriented software, which provides a large amount of modularity and reusability of the different tools developed. Measurements capability on power devices is demonstrated as well as the S-parameters measurements capabilities in critical regions of FET devices. I(V) and RF measures are presented. These measurements provide a nonlinear small-signal equivalent circuit function of the command voltages.
  • Keywords
    FETs; Object oriented databases; Object oriented modeling; Power measurement; Power transistors; Pulse measurements; Radio frequency; Scattering parameters; Software development management; Software reusability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1993. 23rd European
  • Conference_Location
    Madrid, Spain
  • Type

    conf

  • DOI
    10.1109/EUMA.1993.336603
  • Filename
    4136664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091335