Title :
High speed automated pulsed I/V measurement system
Author :
Fernandez, T. ; Newport, Y. ; Zamanillo, J.M. ; Mediavilla, A. ; Tazon, A.
Author_Institution :
Department of Electronics - University of Cantabria - Avda.los, Castros S/N 39005 Santander- Spain. Tel: +34-42-201490, Fax: +34-42-201402
Abstract :
Thermal and trap effects in GaAs MESFET and HEMT devices can be accurately studied using Pulsed Gate and Drain measurement systems. Modelling methods based on static, pulsed I/V characteristics along with S parameters can be implemented into nonlinear simulators in order to obtain better agreement with the experiment. This work proposes a new compact instrumentation philosophy for Pulsed I/V measurements (PIVMS) that achieves 16bit resolution in 300ns pulse widths, avoiding the need for complex expensive external instrumentation and/or Hall effect current probes. The measurement system has been designed to meet requirements of high speed automated test systems, tacking about 20sec for extracting a complete set of bias points. Experimental verification shows the performance of this instrumentation setup.
Keywords :
Current measurement; Gallium arsenide; HEMTs; Hall effect; Instruments; MESFETs; Pulse measurements; Scattering parameters; Space vector pulse width modulation; Velocity measurement;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336604
