High speed automated pulsed I/V measurement system

Author

Fernandez, T. ; Newport, Y. ; Zamanillo, J.M. ; Mediavilla, A. ; Tazon, A.

Author_Institution

Department of Electronics - University of Cantabria - Avda.los, Castros S/N 39005 Santander- Spain. Tel: +34-42-201490, Fax: +34-42-201402

fYear

1993

fDate

6-10 Sept. 1993

Firstpage

494

Lastpage

496

Abstract

Thermal and trap effects in GaAs MESFET and HEMT devices can be accurately studied using Pulsed Gate and Drain measurement systems. Modelling methods based on static, pulsed I/V characteristics along with S parameters can be implemented into nonlinear simulators in order to obtain better agreement with the experiment. This work proposes a new compact instrumentation philosophy for Pulsed I/V measurements (PIVMS) that achieves 16bit resolution in 300ns pulse widths, avoiding the need for complex expensive external instrumentation and/or Hall effect current probes. The measurement system has been designed to meet requirements of high speed automated test systems, tacking about 20sec for extracting a complete set of bias points. Experimental verification shows the performance of this instrumentation setup.

Keywords

Current measurement; Gallium arsenide; HEMTs; Hall effect; Instruments; MESFETs; Pulse measurements; Scattering parameters; Space vector pulse width modulation; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1993. 23rd European

Conference_Location

Madrid, Spain

Type

conf

DOI

10.1109/EUMA.1993.336604

Filename

4136665