Characterizations of field effect devices in V band

The successful design of linear microwave integrated or hybrid circuits highly depends on the accurate knowledge of the electrical and noise properties of the active devices especially field effect devices. In the millimeter wave range, although new measurement tools like V and W band probes are commercially available, the design of high quality test fixture presents a great interest for gain and noise figure measurements of both chips and circuits. For this purpose, a test fixture with integrated bias tees has been developed in the V band.