Title :
Direct extraction of noise sources for MESFET´s and HEMT´s
Author_Institution :
Laborotoires d´´Electronique Philips/Philips Microwave Limeil, 22, Avenue Descartes- 94453 Limeil-Brevannes Cedex, France. Té1. 1.45.10.68.85- Fax 1.45.10.69.53
Abstract :
The purpose of this paper is to present a simple and direct technique (direct means no optimization or assumption) to determine the noise sources from scattering parameters and noise measurements. The proposed noise sources formula can be directly implemented into commercial simulation software and are included in our Foundry Design Manuals.
Keywords :
FETs; Frequency; HEMTs; Impedance; Low-frequency noise; MESFETs; Noise figure; Noise measurement; Roentgenium; Scattering parameters;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336609
