DocumentCode
2091560
Title
Gate oxynitride grown in nitric oxide (NO)
Author
Okada, Y. ; Tobin, P.J. ; Reid, K.G. ; Hegde, R.I. ; Maiti, B. ; Ajuria, S.A.
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
105
Lastpage
106
Abstract
Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO/sub 2/ interface. Much lower thermal budget is required for an NO process than an N/sub 2/O process to produce an oxynitride with useful properties. Submicron MOSFET´s with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N/sub 2/O oxynitride.<>
Keywords
dielectric thin films; insulated gate field effect transistors; nitridation; semiconductor technology; NO; NO process; Si-SiO/sub 2/; Si/SiO/sub 2/ interface; current drive characteristics; gate dielectric; gate oxynitride; hot carrier immunity; nitridation; submicron MOSFETs; thermal budget; Annealing; Design for quality; Dielectric devices; Electron traps; Hot carriers; Kinetic theory; Laboratories; MOSFETs; Neodymium; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324433
Filename
324433
Link To Document