DocumentCode :
2091561
Title :
Broadband 40 GHz Si/SiGe HBT equivalent circuit using a successive analytical model parameter extraction
Author :
Cacho, L.Macho ; Werthof, A. ; Kompa, G.
Author_Institution :
University of Cantabria, Spain
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
515
Lastpage :
517
Abstract :
This paper presents a successive analytical HBT parameter extraction method for the broadband modelling of Si/SiGe HBTs with a unity current gain frequency fT = 54 GHz developed at the Daimler Benz Research Center [4]. Earlier published analytical HBT extraction methods are valid for the device under investigation only in a lower frequency range up to 2 GHz and result in an unphysical negative collector resistance [1], moreover a fully analytical solution was not achieved [1,2,3]. In our general extraction approach we demonstrate for the first time that within the commonly discussed lower frequency range, a fully analytical method can be obtained for the determination of all 12 elements of a basic HBT model with T-topology, making the extraction fast and reliable.
Keywords :
Analytical models; Cutoff frequency; Equivalent circuits; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Parameter extraction; Parasitic capacitance; Scattering parameters; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336611
Filename :
4136672
Link To Document :
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