• DocumentCode
    2091568
  • Title

    “ S-shaped ” photoluminescence emission shift in Cu(In,Ga)Se2 thin films

  • Author

    Liao, Y.K. ; Kuo, S.Y. ; Lai, F.I. ; Lin, W.T. ; Hsieh, D.H. ; Chiu, D.W. ; Kuo, H.C.

  • Author_Institution
    Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.
  • Keywords
    copper compounds; gallium compounds; indium compounds; photoluminescence; semiconductor thin films; spectral line shift; ternary semiconductors; Cu(InGa)Se2; S-shaped emission shift; carrier recombination mechanism; near band edge transition; photoluminescence; thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091568