Title :
Large-signal MESFET model including trapping effects
Author :
Närhi, Tapani ; Valtonen, Martti
Author_Institution :
ESA/ESTEC, European Space Research and Technology Centre, PO Box 299, 2200 AG Noordwijk, The Netherlands, tel: +31-1719-84262, fax: +31-719-84596, e-mail: tnarhi@estec.esa.nl
Abstract :
A physics-based analytical MESFET model is presented. Substrate trapping is modelled, under large-signal conditions, with a simple differential equation which allows consistent description of the observed low-frequency "anomalies": frequency-dispersion of the small-signal parameters, drain-lag effect and hysteresis in the DC curves. Measured and calculated frequency dependence of the drain conductance and susceptance are compared and the implementation of the model in the circuit analysis program APLAC is discussed.
Keywords :
Differential equations; Electron traps; Electronic mail; Frequency dependence; Frequency measurement; MESFET circuits; Neodymium; Nonlinear dynamical systems; Space technology; Voltage;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336614
