DocumentCode
2091615
Title
Large-signal MESFET model including trapping effects
Author
Närhi, Tapani ; Valtonen, Martti
Author_Institution
ESA/ESTEC, European Space Research and Technology Centre, PO Box 299, 2200 AG Noordwijk, The Netherlands, tel: +31-1719-84262, fax: +31-719-84596, e-mail: tnarhi@estec.esa.nl
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
525
Lastpage
527
Abstract
A physics-based analytical MESFET model is presented. Substrate trapping is modelled, under large-signal conditions, with a simple differential equation which allows consistent description of the observed low-frequency "anomalies": frequency-dispersion of the small-signal parameters, drain-lag effect and hysteresis in the DC curves. Measured and calculated frequency dependence of the drain conductance and susceptance are compared and the implementation of the model in the circuit analysis program APLAC is discussed.
Keywords
Differential equations; Electron traps; Electronic mail; Frequency dependence; Frequency measurement; MESFET circuits; Neodymium; Nonlinear dynamical systems; Space technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336614
Filename
4136675
Link To Document