DocumentCode :
2091647
Title :
Influence of annealing temperature on properties of RF sputtered InxSy buffer layers in Cu(In,Ga)Se2 solar cells
Author :
Demiao Wang ; Jingping Lu ; Yuandong Li
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
Sputtered InxSy layers were deposited on glass at post-annealing temperature ranging from 623 to 723K. Investigation of the properties indicated decreased optical band-gap and changes in microstructure with increasing annealing temperature.
Keywords :
annealing; buffer layers; copper compounds; crystal microstructure; energy gap; gallium compounds; indium compounds; optical constants; solar cells; sputter deposition; ternary semiconductors; Cu(InGa)Se2; InxSy; RF sputtered buffer layer properties; SiO2; microstructure; optical band-gap; post-annealing temperature; solar cells; temperature 623 K to 723 K;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2091647
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