• DocumentCode
    2091647
  • Title

    Influence of annealing temperature on properties of RF sputtered InxSy buffer layers in Cu(In,Ga)Se2 solar cells

  • Author

    Demiao Wang ; Jingping Lu ; Yuandong Li

  • Author_Institution
    Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Sputtered InxSy layers were deposited on glass at post-annealing temperature ranging from 623 to 723K. Investigation of the properties indicated decreased optical band-gap and changes in microstructure with increasing annealing temperature.
  • Keywords
    annealing; buffer layers; copper compounds; crystal microstructure; energy gap; gallium compounds; indium compounds; optical constants; solar cells; sputter deposition; ternary semiconductors; Cu(InGa)Se2; InxSy; RF sputtered buffer layer properties; SiO2; microstructure; optical band-gap; post-annealing temperature; solar cells; temperature 623 K to 723 K;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091647