0.15 /spl mu/m ArF excimer laser lithography using top surface imaging with high contrast silylation agent B(DMA)DS

Author

Ohfuji, T. ; Aizaki, N.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan

fYear

1994

fDate

7-9 June 1994

Firstpage

93

Lastpage

94

Abstract

The authors developed a room temperature liquid phase silylation process using Bis(dimethylamino)dimetylsilane (B[DMA]DS), which had been reported as the highest contrast silylation agent in the i-line DESIRE process. This paper describes the potential of the 193 nm lithography for 0.15 /spl mu/m rule and discuss process capabilities. Room temperature liquid phase silylation with B(DMA)DS was applied to 193nm ArF excimer laser lithography, 0.14 /spl mu/m resolution was acheived with a conventional binary mask. It is demonstrated that 193 nm is the most promising method for 1-4G DRAMs fabrication.<>

Keywords

DRAM chips; integrated circuit technology; organic compounds; photolithography; 0.15 /spl mu/m ArF excimer laser lithography; 0.15 /spl mu/m rule; 0.15 mum; 0.2 mum; 0.3 mum; 193 nm; 193nm lithography; ArF; B(DMA)DS; Bis(dimethylamino)dimetylsilane; DRAM fabrication; binary mask; high contrast silylation agent; i-line DESIRE process; liquid phase silylation process; process capabilities; room temperature; top surface imaging; Dry etching; Linearity; Lithography; Paper technology; Resists; Silicon; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324439

Filename

324439