Title :
Advanced surface modification process for sub-quarter micron pattern fabrication
Author :
Matsuo, T. ; Yamashita, K. ; Endo, M. ; Sasago, M. ; Nomura, N. ; Shirai, M. ; Tsunooka, M.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Advanced surface modification process with selective chemical vapor deposition method was developed for sub-quarter micron fabrication. With the advanced surface modification process, the high surface modification contrast was achieved and 0.2 micron geometry was successfully fabricated. It has been confirmed that sub-quarter micron ULSIs will be fabricated by optical lithography with the advanced surface modification process.<>
Keywords :
VLSI; chemical vapour deposition; integrated circuit technology; photolithography; surface treatment; 0.2 micron geometry; 0.2 mum; CVD; ULSIs; advanced surface modification process; high surface modification contrast; optical lithography; selective chemical vapor deposition method; sub-quarter micron pattern fabrication; Chemical vapor deposition; Degradation; Etching; Fabrication; Focusing; Lithography; Optical films; Optical imaging; Polymers; Resists;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324440
