A proposed porous methylhydrogensilsesquioxane-based low-k film with k~2.3 for intermetal dielectric application in high speed memory device

We introduced the novel porous low-k material with k~2.3 improved the physical properties for intermetal dielectric application in high speed memory device. Because this low-k material has both Si-H and Si-CH ₃ bonds in its SiO₂ film, it reduced the bowing and adhesion failure of P-HSQ and P-MSQ at via profile and metal wire. As this material was applied at device, the parasitic capacitance between metal wires was reduced till 20% compared with that of the HSQ