Title :
Optimization of GaAs nanowire array for solar cells
Author :
Hu, Ya ; LaPierre, Ray R. ; Li, Meng ; Chen, K. ; He, Jinwei
Author_Institution :
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
Abstract :
The reflectance, transmittance and absorptance of GaAs nanowire (NW) arrays are calculated by solving Maxwell´s equations using the finite element method. The model is compared with measurement results from well-ordered periodic GaAs NW arrays fabricated by dry etching. The model results are also compared with the reflectance measured from NWs grown by the Au-assisted vapor-liquid-solid (VLS) method. The optimum NW diameter, periodicity (spacing between NWs) and length are determined to maximize absorptance of the AM1.5G solar spectrum and short circuit current density in a NW array solar cell. The geometry structure of GaAs-Si two junction solar cell is also determined.
Keywords :
III-V semiconductors; Maxwell equations; elemental semiconductors; etching; finite element analysis; gallium arsenide; nanofabrication; nanowires; optimisation; reflectivity; semiconductor device models; semiconductor growth; semiconductor junctions; silicon; solar cell arrays; Au-assisted vapor-liquid-solid method; GaAs; GaAs nanowire array absorptance; GaAs nanowire array optimization; GaAs nanowire array reflectance; GaAs nanowire array transmittance; GaAs-Si; GaAs-Si two junction solar cell; Maxwell equations; dry etching; finite element method; geometry structure; maximize absorptance; nanowire array solar cell; optimum nanowire diameter; optimum nanowire length; optimum nanowire periodicity; short circuit current density; solar cells; solar spectrum; well-ordered periodic GaAs nanowire arrays; GaAs; VLS; absorptance; nanowire; photovoltaic; reflectance; solar cell; transmittance; two junction; vapor-liquid-solid;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
