Title :
Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs
Author :
Markov, Stanislav ; Amoroso, Salvatore Maria ; Gerrer, Louis ; Adamu-Lema, F. ; Asenov, Asen
Author_Institution :
Device Modeling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
We report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits.
Keywords :
MOSFET; statistical analysis; 3D simulation; BTI stress; electrostatic interactions; gate oxide; multiple oxide traps; nanoscale bulk MOSFET; statistical interactions; temperature instability; Bias and temperature instability (BTI); complimentary metal–oxide–semiconductor (CMOS); random telegraph noise (RTN); reliability; variability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2253541
