Title :
Study on reliability of metal fuse for sub-100nm technology
Author :
Park, Don ; Hyun, Chang-Suk ; Kim, Hyun-Chul ; Kang, Hyuck-Jin ; Lee, Kang-Yoon ; Oh, Kyung-Seok
Author_Institution :
DRAM PA Team, Samsung Electron. Co. Ltd., Hwasung
Abstract :
Tungsten bit line fuse has been used for years in repair application but it fails during BOC (board on chip) package PCT (pressure cooker test) because of its weakness to corrosion. We searched for new material against corrosion, and metal-1 aluminum fuse was set up. Although there is no failure in PCT, we have found a fatal failure in IMD (inter-metal dielectric) crack during THB (temperature humidity bias test). We developed SiN full passivation scheme to resolve the failure then there is no failure until THB 1000 hours. Finally we set up metal-1 aluminum fuse process for sub-100 nm technology
Keywords :
aluminium alloys; chip-on-board packaging; corrosion protection; integrated circuit manufacture; passivation; reliability; semiconductor technology; tungsten; SiN; board on chip package; corrosion; inter-metal dielectric; metal-1 aluminum fuse; passivation scheme; pressure cooker test; temperature humidity bias test; tungsten bit line fuse; Aluminum; Corrosion; Dielectric materials; Fuses; Humidity; Inorganic materials; Packaging; Temperature; Testing; Tungsten;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513394
