Study on reliability of metal fuse for sub-100nm technology

Author

Park, Don ; Hyun, Chang-Suk ; Kim, Hyun-Chul ; Kang, Hyuck-Jin ; Lee, Kang-Yoon ; Oh, Kyung-Seok

Author_Institution

DRAM PA Team, Samsung Electron. Co. Ltd., Hwasung

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

420

Lastpage

421

Abstract

Tungsten bit line fuse has been used for years in repair application but it fails during BOC (board on chip) package PCT (pressure cooker test) because of its weakness to corrosion. We searched for new material against corrosion, and metal-1 aluminum fuse was set up. Although there is no failure in PCT, we have found a fatal failure in IMD (inter-metal dielectric) crack during THB (temperature humidity bias test). We developed SiN full passivation scheme to resolve the failure then there is no failure until THB 1000 hours. Finally we set up metal-1 aluminum fuse process for sub-100 nm technology

Keywords

aluminium alloys; chip-on-board packaging; corrosion protection; integrated circuit manufacture; passivation; reliability; semiconductor technology; tungsten; SiN; board on chip package; corrosion; inter-metal dielectric; metal-1 aluminum fuse; passivation scheme; pressure cooker test; temperature humidity bias test; tungsten bit line fuse; Aluminum; Corrosion; Dielectric materials; Fuses; Humidity; Inorganic materials; Packaging; Temperature; Testing; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513394

Filename

1513394