Title :
Simple, fast, 2.5-V CMOS logic with 0.25-/spl mu/m channel lengths and damascene interconnect
Author :
Koburger, C. ; Adkisson, J. ; Clark, W. ; Davari, B. ; Geissler, S. ; Givens, J. ; Hansen, H. ; Holmes, S. ; Lee, H.K. ; Lee, J. ; Luce, S. ; Martin, D. ; Mittl, S. ; Nakos, J. ; Stiffler, S.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
An advanced half-micron CMOS technology is demonstrated. Devices with 0.25-/spl mu/m channel lengths provide high speed. Reduced supply voltage is employed to provide reliability with low-cost processing. A damascene tungsten interconnect fabricated using a nitride etch stop allows use of 30-/spl mu/m/sup 2/ SRAM cells.<>
Keywords :
CMOS integrated circuits; integrated logic circuits; metallisation; tungsten; 0.25 micron; 2.5 V; CMOS logic; SRAM cells; W; W interconnect; damascene interconnect; half-micron CMOS technology; nitride etch stop; reliability; CMOS logic circuits; CMOS technology; Delay; Etching; Paper technology; Passivation; Planarization; Ring oscillators; Tungsten; Wiring;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324443
