Title :
Effect of ultra-thin Ti layer on PtSi work function modulation
Author :
Ohmi, S. ; Kato, Y. ; Fujiura, H. ; Sawakuma, Y. ; Ohkuma, N.
Author_Institution :
Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Japan
Abstract :
The effect of ultra-thin Ti layer on PtSi work function modulation was investigated. 1 nm-thick Ti layer inserted at the Pt/Si(100) interface was found to be lowering Schottky-barrier height without increase of sheet resistance. Furthermore, silicidation of Si/Pt/Ti/Si(100) stacked layer structures was also investigated for thicker silicide layer formations by the proposed elevated self-aligned silicide (salicide) process. The thermal stability was significantly improved by insertion of Ti layer.
Keywords :
Schottky barriers; elemental semiconductors; integrated circuit manufacture; integrated circuit technology; multilayers; platinum; silicon; thermal stability; titanium; PtSi work function modulation; Schottky-barrier height; Si-Pt-Ti; elevated self-aligned silicide process; sheet resistance; silicidation; silicide layer formations; stacked layer structures; thermal stability; ultra-thin Ti layer; Atomic force microscopy; Electrons; Immune system; Radio frequency; Rapid thermal annealing; Silicidation; Silicides; Sputtering; Temperature; Thermal stability;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513396
