DocumentCode
2091804
Title
Electric field enhancement caused by porosity in ultra-low-k dielectrics
Author
Hong, Changsoo ; Milor, Linda
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2005
fDate
13-15 Sept. 2005
Firstpage
434
Lastpage
437
Abstract
It is demonstrated that the electric field distribution can be distinguishably enhanced by the presence of free volumes or pores in dielectrics. It is shown that the intensity of the electric field is dependent on the permittivity, shape and interconnectivity of the pores. This leads to the conclusion that inclusion of porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism.
Keywords
electric fields; integrated circuit interconnections; integrated circuit manufacture; permittivity; porosity; dielectric breakdown mechanism; electric field distribution; electric field enhancement; electric field intensity; insulating property; permittivity; porosity; ultra-low-k dielectrics; Degradation; Dielectric constant; Dielectric materials; Distributed computing; Permittivity; Polarization; Propagation delay; Semiconductor materials; Shape; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN
0-7803-9143-8
Type
conf
DOI
10.1109/ISSM.2005.1513398
Filename
1513398
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