Title :
Electric field enhancement caused by porosity in ultra-low-k dielectrics
Author :
Hong, Changsoo ; Milor, Linda
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
It is demonstrated that the electric field distribution can be distinguishably enhanced by the presence of free volumes or pores in dielectrics. It is shown that the intensity of the electric field is dependent on the permittivity, shape and interconnectivity of the pores. This leads to the conclusion that inclusion of porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism.
Keywords :
electric fields; integrated circuit interconnections; integrated circuit manufacture; permittivity; porosity; dielectric breakdown mechanism; electric field distribution; electric field enhancement; electric field intensity; insulating property; permittivity; porosity; ultra-low-k dielectrics; Degradation; Dielectric constant; Dielectric materials; Distributed computing; Permittivity; Polarization; Propagation delay; Semiconductor materials; Shape; Thermal conductivity;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513398
