DocumentCode :
2091859
Title :
Semiconductor-based carrier-envelope phase defector
Author :
Jirauschek, Christian ; Duan, Lingjie ; Mücke, Oliver D. ; Kaertner, Fram X. ; Hof, Klaus D. ; Tritschier, T. ; Wegener, Martin
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA
fYear :
2004
fDate :
21-21 May 2004
Firstpage :
987
Lastpage :
989
Abstract :
We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated
Keywords :
III-V semiconductors; conduction bands; high-speed optical techniques; photodetectors; semiconductor device models; valence bands; carrier-envelope phase detector; higher-lying states dephasing; two-band semiconductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
Type :
conf
Filename :
1367103
Link To Document :
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