• DocumentCode
    2091859
  • Title

    Semiconductor-based carrier-envelope phase defector

  • Author

    Jirauschek, Christian ; Duan, Lingjie ; Mücke, Oliver D. ; Kaertner, Fram X. ; Hof, Klaus D. ; Tritschier, T. ; Wegener, Martin

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA
  • fYear
    2004
  • fDate
    21-21 May 2004
  • Firstpage
    987
  • Lastpage
    989
  • Abstract
    We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated
  • Keywords
    III-V semiconductors; conduction bands; high-speed optical techniques; photodetectors; semiconductor device models; valence bands; carrier-envelope phase detector; higher-lying states dephasing; two-band semiconductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2004. (IQEC). International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-778-4
  • Type

    conf

  • Filename
    1367103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091859