• DocumentCode
    2091876
  • Title

    Growth and characterization of GaAs/InxGa1−xAs/GaAs axial heterostructure nanowires by MOCVD

  • Author

    Xiaolong Lv ; Xia Zhang ; Xin Yan ; Jiangong Cui ; Junshuai Li ; Yongqing Huang ; Xiaomin Ren

  • Author_Institution
    State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report on the Au-assisted growth of GaAs/InxGa1-xAs/GaAs axial double-heterostructure nanowires via metalorganic chemical vapor deposition (MOCVD) technique. The influence of indium content in Au particle on the morphology of nanowires was investigated systematically. The experimental results were thought to be related with the composition characteristic of the alloy catalyst as well as the Vapor-Liquid-Solid (VLS) growth mechanism.
  • Keywords
    III-V semiconductors; MOCVD; catalysis; gallium arsenide; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor heterojunctions; GaAs-InxGa1-xAs-GaAs; MOCVD; alloy catalyst; axial double-heterostructure nanowires; composition property; metalorganic chemical vapor deposition; morphology; vapor-liquid-solid growth mechanism;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091876