DocumentCode :
2091876
Title :
Growth and characterization of GaAs/InxGa1−xAs/GaAs axial heterostructure nanowires by MOCVD
Author :
Xiaolong Lv ; Xia Zhang ; Xin Yan ; Jiangong Cui ; Junshuai Li ; Yongqing Huang ; Xiaomin Ren
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
We report on the Au-assisted growth of GaAs/InxGa1-xAs/GaAs axial double-heterostructure nanowires via metalorganic chemical vapor deposition (MOCVD) technique. The influence of indium content in Au particle on the morphology of nanowires was investigated systematically. The experimental results were thought to be related with the composition characteristic of the alloy catalyst as well as the Vapor-Liquid-Solid (VLS) growth mechanism.
Keywords :
III-V semiconductors; MOCVD; catalysis; gallium arsenide; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor heterojunctions; GaAs-InxGa1-xAs-GaAs; MOCVD; alloy catalyst; axial double-heterostructure nanowires; composition property; metalorganic chemical vapor deposition; morphology; vapor-liquid-solid growth mechanism;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510722
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2091876
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