Title :
Advanced patterning solutions for self-aligned MOS structures in flash memory
Author :
Yeh, Edward K. ; Howard, Bradley J. ; McGarvey, Gordon ; Hill, Ervin ; Freidjung, Inbal ; Lane, Melissa
Author_Institution :
California Technol. & Manufacturing, Intel Corp., Santa Clara, CA, USA
Abstract :
The self-aligned MOS (SMS) structure in flash memory is a complex stack that requires novel patterning solutions. For the 90-nm node, we were able to implement an industry-leading 193-nm lithography process. At the 65-nm node, technical constraints drove a significant process flow change which incorporates an enhanced hardmask (EHM) layer. The benefit realized from this change is a wider process window for both lithography and etch.
Keywords :
MOS integrated circuits; etching; flash memories; nanolithography; 193 nm; 65 nm; 90 nm; enhanced hardmask layer; flash memory; nanolithography process; process flow change; self-aligned MOS structures; Coatings; Dielectrics; Etching; Flash memory; Isolation technology; Lithography; Manufacturing industries; Resists; Silicon; Surfaces;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513400
