Application of reverse scattering bar for memory device, combined with model-based OPC

Author

Lee, S. ; Chen, G. ; Lee, R.

Author_Institution

Memory Technol. Dev. Center, Semiconductor Manufacturing Int. Corp., Shanghai, China

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

446

Lastpage

449

Abstract

The generation methodology for reverse-scattering bar(RSB) is introduced, combined with model-based OPC(optical proximity correction) for memory devices. Unlike well-known scattering bar(SB) generation for poly or metal layers or RSB for contact layers, RSB application for active layer, accompanied by model-based OPC needs more complicated and elaborate layout handling. Besides the generation methodology, pattern fidelity of RSB on mask level is checked. In the end, effect of RSB on process windows have been evaluated with typical circuit pattern of memory devices.

Keywords

flash memories; integrated circuit manufacture; integrated circuit technology; masks; photolithography; proximity effect (lithography); active layer; circuit pattern; contact layers; memory device; metal layers; optical proximity correction; pattern fidelity; process windows; reverse scattering bar; Circuit testing; Frequency; Integrated circuit manufacture; Integrated circuit technology; Lighting; Lithography; Random access memory; Scattering; Semiconductor device manufacture; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513401

Filename

1513401