AlGaN/GaN Schottky Diode Fabricated by Au Free Process

Author

Lifang Jia ; Wei Yan ; Zhongchao Fan ; Zhi He ; Xiaodong Wang ; Guohong Wang ; Fuhua Yang

Author_Institution

Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1235

Lastpage

1237

Abstract

An AlGaN/GaN Schottky diode is fabricated using an Au free process. Both ohmic and Schottky contact are studied. The ohmic contact results show low contact resistance and good surface morphology. The specific resistance (ρc) and contact resistance (Rc) of the ohmic contact are ~ 3.5×10^-5 Ω×cm² and 2.1 Ω·mm, respectively. Several current transport mechanisms are employed to analyze the measured I- V curves of the diode. The data have demonstrated that at a lower forward bias the combination of generation recombination and tunneling current mechanisms are dominant, whereas the thermionic emission mechanism becomes more significant at a higher forward bias. The effective Schottky barrier height is estimated to be 0.99 eV. The breakdown voltage of AlGaN/GaN Schottky diode is ~ 125 V.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; contact resistance; gold; ohmic contacts; semiconductor device breakdown; surface morphology; tunnelling; wide band gap semiconductors; AlGaN-GaN; Au; I- V curves; Schottky barrier height; Schottky contact; Schottky diode; breakdown voltage; contact resistance; current transport mechanisms; forward bias; generation recombination; gold free process; ohmic contact; specific resistance; surface morphology; thermionic emission mechanism; tunneling current mechanisms; Aluminum gallium nitride; Gallium nitride; Gold; Ohmic contacts; Resistance; Schottky diodes; Tin; AlGaN/GaN; Au free; Schottky barrier height; ohmic contact; reverse property;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2278337

Filename

6594843