Metal-semiconductor point-contact diodes for frequency mixing in the near infrared

Author

Bava, E. ; Svelto, C. ; Galzerano, G. ; Beverini, N. ; Carelli, G. ; De Michele, A. ; Maccioni, E. ; Sorrentino, F. ; Moretti, A. ; Prevedelli, M.

Author_Institution

Dept. of Elettron. e Inf., INFM & IEIIT-CNR, Milan

fYear

2004

fDate

5-7 April 2004

Firstpage

464

Lastpage

467

Abstract

We tested the performance of metal-semiconductor point- contact diodes as frequency mixers in the near infrared region. We performed preliminary experiments in order to phase-lock two diode laser at 850 nm some hundred GHz apart. We used GaSb, InAs and InSb as semiconductor layer. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1 GHz SAW oscillator. The optical phase-lock loop is implemented using a novel analog+digital phase detector.

Keywords

Gunn diodes; III-V semiconductors; gallium compounds; indium compounds; optical phase locked loops; phase detectors; point contacts; semiconductor-metal boundaries; surface acoustic wave oscillators; GaSb; Gunn diode; InAs; InSb; SAW oscillator; analog-digital phase detector; diode laser; frequency 1 GHz; frequency lock; frequency mixers; metal-semiconductor point-contact diodes; optical phase-lock loop; wavelength 850 nm; mixer; near infrared; phase lock;

fLanguage

English

Publisher

iet

Conference_Titel

Frequency and Time Forum, 2004. EFTF 2004. 18th European

Conference_Location

Guildford

ISSN

0537-9989

Print_ISBN

0-86341-384-6

Type

conf

Filename

5075000