Title :
Controlled integration of silica nanospheres in a-plane GaN on r-plane sapphire
Author :
Sung Hyun Park ; Euijoon Yoon
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
Nano-scale silica nanospheres were selectively integrated in three-dimensional a-plane GaN buffer. We attribute the improved efficiency of the a-plane GaN LEDs to the improved crystal quality and increased extraction efficiency by imbedded silica nanospheres.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanofabrication; nanostructured materials; silicon compounds; wide band gap semiconductors; 3D a-plane GaN buffer; Al2O3; GaN-SiO2; a-plane GaN LED; controlled integration; extraction efficiency; improved crystal quality; improved efficiency; nanoscale silica nanospheres; r-plane sapphire;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
