DocumentCode :
2092860
Title :
BAW Microwave temperature sensor
Author :
Alekseev, S.G. ; Mansfeld, G.D. ; Kotelanskii, I.M. ; Veretin, V.S.
Author_Institution :
Inst. of Radioengineering & Electron., RAS, Moscow
fYear :
2004
fDate :
5-7 April 2004
Firstpage :
569
Lastpage :
569
Abstract :
This work is aimed at the study of a potential possibilities of microwave Bulk Acoustic Wave resonators for temperature measurements. The resonators under study had nonstandard high overtone BAW resonator configuration: a thin piezoelectric film ZnO with electrodes was deposited onto the surface of the substrate made of the (100) oriented YAG plate with the thickness 480... 980 mum. The new technical solution was that resonator was acoustically isolated and protected from the ambient mechanical influence. For this purpose the bottom side of the plate and the top electrode of the resonator structure were isolated from ambient by a nine-layer Bragg Ti-W quarter-wave length thin film reflectors. Due to the isolation it can become no sensitive even to liquids getting on the surfaces of the resonator. Total thickness of all deposited layers was less than 12mum. The resonator aperture was less than 600mum.
Keywords :
III-V semiconductors; acoustic resonators; bulk acoustic wave devices; microwave detectors; piezoelectric thin films; semiconductor thin films; surface acoustic wave sensors; temperature measurement; temperature sensors; thin film sensors; wide band gap semiconductors; zinc compounds; BAW microwave temperature sensor; Ti-W; ZnO; bulk acoustic wave resonator; nine-layer Bragg reflector; quarter-wave length thin film reflector; temperature measurement;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Frequency and Time Forum, 2004. EFTF 2004. 18th European
Conference_Location :
Guildford
ISSN :
0537-9989
Print_ISBN :
0-86341-384-6
Type :
conf
Filename :
5075019
Link To Document :
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