DocumentCode :
2092907
Title :
Light extraction efficiency in III-nitride LEDs
Author :
Chang, S.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
1
Abstract :
Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; LED; high refractive index; light extraction efficiency; GaN; LED; light extraction efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510758
Link To Document :
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