Title :
Light extraction efficiency in III-nitride LEDs
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; LED; high refractive index; light extraction efficiency; GaN; LED; light extraction efficiency;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
