DocumentCode
2093193
Title
Structural and optical characterization of highly-strained BInGaAs/GaAs quantum wells
Author
Zhigang Jia ; Qi Wang ; Xiaomin Ren ; Yingce Yan ; Shiwei Cai ; Xia Zhang ; Yongqing Huang ; Xiaofeng Duan
Author_Institution
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
Highly-strained BInGaAs/GaAs quantum wells have been grown at low temperature by incorporating boron element into InGaAs/GaAs quantum wells. The effects of boron incorporation on the structural and optical properties of highly-strained InGaAs/GaAs QWs been investigated.
Keywords
III-V semiconductors; boron compounds; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; BInGaAs-GaAs; highly-strained quantum wells; optical property; structural property;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510767
Link To Document