DocumentCode :
2093844
Title :
Calculated signal-noise ratio of the combination of a P-I-N photodiode and a distributed amplifier with frequency dependent characteristic impedances
Author :
Liong, Jia Yi ; Aitchison, Colin S.
Author_Institution :
Dept. of Electrical Eng. & Electronics Brunel University, Uxbridge, Middlesex, UB8 3PH, U.K Tel: +44 895 274-000 ext. 2841, Fax: +44 895 258-728
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
758
Lastpage :
759
Abstract :
The distributed amplifier gives a novel approach to a high speed photo-detecting circuit. This paper presents a combination of a p-i-n diode and a distributed amplifier with frequency dependent characteristic impedances. A 14.3 dB improvement in signal-to-noise ratio for this configuration is predicted at a bandwidth of 40 GHz over a conventional grounded-source amplifier combination.
Keywords :
Bandwidth; Capacitance; Circuit noise; Distributed amplifiers; Frequency dependence; Impedance; MESFETs; Optical amplifiers; PIN photodiodes; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336695
Filename :
4136756
Link To Document :
بازگشت