DocumentCode :
2093888
Title :
Simulataneous formation of InGaN nanostructures with varying shapes for white light source applications
Author :
Gasim, A. ; Cha, D. ; Ng, Tien Khee ; Bhattacharya, Pallab ; Ooi, Boon S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
1
Abstract :
Varying shapes of InGaN nanostructures were simultaneously formed on silicon epitaxially. The nanowires and nanomushrooms emit violet-blue light, and broad yellow-orange-red luminescence, respectively. The combination of which is promising for white light emission.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light sources; luminescence; nanophotonics; nanowires; silicon; wide band gap semiconductors; InGaN; Si; nanomushrooms; nanostructures; nanowires; violet-blue light; white light source; yellow-orange-red luminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510797
Link To Document :
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