• DocumentCode
    2093888
  • Title

    Simulataneous formation of InGaN nanostructures with varying shapes for white light source applications

  • Author

    Gasim, A. ; Cha, D. ; Ng, Tien Khee ; Bhattacharya, Pallab ; Ooi, Boon S.

  • Author_Institution
    Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Varying shapes of InGaN nanostructures were simultaneously formed on silicon epitaxially. The nanowires and nanomushrooms emit violet-blue light, and broad yellow-orange-red luminescence, respectively. The combination of which is promising for white light emission.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light sources; luminescence; nanophotonics; nanowires; silicon; wide band gap semiconductors; InGaN; Si; nanomushrooms; nanostructures; nanowires; violet-blue light; white light source; yellow-orange-red luminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2093888