• DocumentCode
    2093915
  • Title

    III-nitride photovoltaics

  • Author

    Wierer, J.J. ; Wang, George T. ; Qiming Li ; Koleske, Daniel D. ; Lee, Shi-Wei Ricky

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    III-nitride solar cells comprised of planar and core-shell nanowire arrays are demonstrated. The nanowire architecture enables advantages such as elastic strain relief within the InGaN shell and increased absorption by nanowire light scattering.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; nanowires; solar cells; wide band gap semiconductors; III-nitride photovoltaics; III-nitride solar cells; InGaN; InGaN shell; core-shell nanowire array; elastic strain relief; nanowire architecture; nanowire light scattering; planar nanowire array;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2093915