DocumentCode :
2093915
Title :
III-nitride photovoltaics
Author :
Wierer, J.J. ; Wang, George T. ; Qiming Li ; Koleske, Daniel D. ; Lee, Shi-Wei Ricky
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
1
Abstract :
III-nitride solar cells comprised of planar and core-shell nanowire arrays are demonstrated. The nanowire architecture enables advantages such as elastic strain relief within the InGaN shell and increased absorption by nanowire light scattering.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanowires; solar cells; wide band gap semiconductors; III-nitride photovoltaics; III-nitride solar cells; InGaN; InGaN shell; core-shell nanowire array; elastic strain relief; nanowire architecture; nanowire light scattering; planar nanowire array;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510799
Link To Document :
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