Title :
Design of voltage-controlled oscillator in GSM/EDGE handset RFIC
Author :
Xu, Chen ; Feng, Xu ; Ru, Huang ; Xin´an, Wang ; Lu, Tang
Author_Institution :
Key Lab. of Integrated Micro-Syst., Peking Univ., Shenzhen, China
Abstract :
Based on the requirements of phase noise and frequency tuning range of the GSM system, this paper designs a voltage-controlled oscillator suitable for GSM/EDGE handset RFIC with the structure of no-tail current source and switched-capacitor array. The whole circuit uses TSMC 0.18 μm CMOS technology. The power supply is 3.3V. The simulation results show that the operating frequency covers 3296 ~ 3980 MHz, the peak value of output voltage is 5.32V@3622 MHz, and the phase noise is -101.41 dBc/Hz at 100 kHz offset and -155.37 dBc/Hz at 20 MHz offset. It will satisfy the requirements of GSM/EDGE application.
Keywords :
3G mobile communication; CMOS integrated circuits; cellular radio; radiofrequency integrated circuits; voltage-controlled oscillators; GSM-EDGE handset RFIC; TSMC CMOS technology; VCO; frequency 100 kHz; frequency 20 MHz; frequency 3296 MHz to 3980 MHz; frequency tuning range; no-tail current source; phase noise; size 0.18 mum; switched-capacitor array; voltage 3.3 V; voltage 5.32 V; voltage-controlled oscillator design; Active circuits; Integrated circuit modeling; Switches; Switching circuits;
Conference_Titel :
Communication Technology (ICCT), 2010 12th IEEE International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6868-3
DOI :
10.1109/ICCT.2010.5689030
