DocumentCode
2094031
Title
Conversion gain and noise in microwave analog frequency dividers using various types of FET
Author
Amine, H. ; Llopis, O. ; Plana, R. ; Graffeuil, J. ; Sautereau, J.F.
Author_Institution
LAAS-CNRS, 7 Av. Colonel Roche, 3 1077 Toulouse Cedex, (France); Université Paul Sabatier, 118 Route de Narbone, 31056 Toulouse, Cedex (France). Tel (33) 61.33.63.71; Fax (33) 61 33.62.08
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
774
Lastpage
776
Abstract
Analog frequency dividers using Field Effect Transistors have been investigated with respect to various device structures (MESFET, HEMT and PHEMT). It was found that the transconductance parameter value (Idss/Vt2) essentially governs the capability of achieving a large conversion gain. Also, there was no added phase noise under normal operating conditions. Otherwise it mostly depends on the device low frequency noise and nonlinearity. Finally some guidelines for selecting the most appropriate device structures are outlined.
Keywords
Frequency conversion; Guidelines; HEMTs; Low-frequency noise; MESFETs; Microwave FETs; Microwave devices; PHEMTs; Phase noise; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336701
Filename
4136762
Link To Document