Title :
Conversion gain and noise in microwave analog frequency dividers using various types of FET
Author :
Amine, H. ; Llopis, O. ; Plana, R. ; Graffeuil, J. ; Sautereau, J.F.
Author_Institution :
LAAS-CNRS, 7 Av. Colonel Roche, 3 1077 Toulouse Cedex, (France); Université Paul Sabatier, 118 Route de Narbone, 31056 Toulouse, Cedex (France). Tel (33) 61.33.63.71; Fax (33) 61 33.62.08
Abstract :
Analog frequency dividers using Field Effect Transistors have been investigated with respect to various device structures (MESFET, HEMT and PHEMT). It was found that the transconductance parameter value (Idss/Vt2) essentially governs the capability of achieving a large conversion gain. Also, there was no added phase noise under normal operating conditions. Otherwise it mostly depends on the device low frequency noise and nonlinearity. Finally some guidelines for selecting the most appropriate device structures are outlined.
Keywords :
Frequency conversion; Guidelines; HEMTs; Low-frequency noise; MESFETs; Microwave FETs; Microwave devices; PHEMTs; Phase noise; Transconductance;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336701
