Title :
High speed silicon Mach-Zehnder modulator with circuit model analysis
Author :
Hao Xu ; Xi Xiao ; Xianyao Li ; Yingtao Hu ; Zhiyong Li ; Tao Chu ; Yude Yu ; Jinzhong Yu
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
We report a 40 Gbit/s traveling-wave silicon Mach-Zehnder modulator fabricated in a commercial 0.18 μm CMOS process. A distributed circuit model is proposed to characterize the bandwidth performance of this modulator.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optoelectronics; optical fabrication; optical modulation; silicon; Si; bandwidth performance; bit rate 40 Gbit/s; commercial CMOS process; distributed circuit model; traveling-wave high speed silicon Mach-Zehnder modulator;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
