Title :
Wide band monolithic GaAs SSB modulator
Author :
Bóveda, A. ; Ortigoso, F. ; Alonso, J.I. ; Sánchez, J.C. ; Pérez, F.
Author_Institution :
Alcatel Standard Electrica, S.A. c/Einstein s/n, Tres Cantos, 28760 Madrid, Spain, Tel: 34 1 803 47 10; Fax: 34 1 804 00 16; e-mail boveda@trescantos.sesa.es
Abstract :
A GaAs monolithic single-side-band up-converter designed for use in communication systems is presented. The device uses two high performance four-quadrant-multipliers made with MESFET´s using the Gilbert cell structure, that are operated in a 90° configuration to generate a single-sideband output. More than one-decade (0.5-5 GHz) RF bandwidth is achieved. IF bandwidth is DC500 MHz and power consumption is 300 mW. Real measurements demonstrate more than 40 dB suppression of all spurious signals, over the whole RF and IF bandwidth. The chip includes 16 MESFETs and 32 passive elements in a 1.5 × 2.4 mm2 area.
Keywords :
Amplitude modulation; Bandwidth; Circuits; Gallium arsenide; MESFETs; Radio frequency; Schottky diodes; Signal generators; Voltage; Wideband;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336720
