DocumentCode
2094887
Title
Influence of the p-doping distribution in GaN barriers on the performance of blue light-emitting diodes
Author
Chao Liu ; Taiping Lu ; Zhiwei Ren ; Xin Chen ; Bijun Zhao ; Yian Yin ; Jinhui Tong ; Shuti Li
Author_Institution
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
Blue light-emitting diodes with constant total p-doping amount but different doping distribution in barriers have been numerically studied. With more p-doping amount centralized in the last barrier, improved output power and efficiency droop were illustrated.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor doping; wide band gap semiconductors; GaN; blue light emitting diodes; efficiency droop; p-doping distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510836
Link To Document