Title :
Influence of the p-doping distribution in GaN barriers on the performance of blue light-emitting diodes
Author :
Chao Liu ; Taiping Lu ; Zhiwei Ren ; Xin Chen ; Bijun Zhao ; Yian Yin ; Jinhui Tong ; Shuti Li
Author_Institution :
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
Abstract :
Blue light-emitting diodes with constant total p-doping amount but different doping distribution in barriers have been numerically studied. With more p-doping amount centralized in the last barrier, improved output power and efficiency droop were illustrated.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor doping; wide band gap semiconductors; GaN; blue light emitting diodes; efficiency droop; p-doping distribution;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
