Title :
Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions
Author :
Da-Wei Lin ; Chao-Hsun Wang ; Shih-Pang Chang ; Ching-Hsueh Chiu ; Yu-Pin Lan ; Zhen-Yu Li ; Jin-Chai Li ; Tien-Chang Lu ; Shing-Chung Wang ; Hao-Chung Kuo
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, we propose several methods to improve the efficiency droop of GaN-based light-emitting diodes by optimization of active regions, such as alternative substrates, semi-polar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN-based light emitting diodes; active regions; efficiency droop; graded-composition EBL; graded-thickness MQW; insertion layer; optimization; semipolar MQW;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
