DocumentCode :
2094944
Title :
Droop improvement in blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers
Author :
Jinhui Tong ; Shuti Li
Author_Institution :
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
We study the characters of blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers. The efficiency droop can be markly improved when the AlGaN/InGaN superlattice barriers are used.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor superlattices; wide band gap semiconductors; AlGaN-InGaN; blue light emitting diodes; droop improvement; superlattice barriers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510838
Link To Document :
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