Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

Author

Uchida, Ken ; Watanabe, Hiroshi ; Koga, Junji ; Kinoshita, Atsuhiro ; Takagi, Shin-ichi

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

8

Lastpage

13

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, T/sub SOI/, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as T/sub SOI/ decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

Keywords

MOSFET; electron mobility; fluctuations; hole mobility; semiconductor device measurement; silicon-on-insulator; 3.5 to 4.5 nm; 4 nm; CMOSFET; Si-SiO/sub 2/; atomic-level SOI thickness fluctuations; carrier mobility; carrier transport mechanisms; electron mobility; gate-channel capacitance; hole mobility; quantum-mechanical confinement; threshold voltage; ultrathin-body SOI MOSFET; CMOSFETs; Electric variables; Electron mobility; Fluctuations; MOSFET circuits; Particle scattering; Raman scattering; Residual stresses; Semiconductor films; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233625

Filename

1233625