• DocumentCode
    2095149
  • Title

    CLIMATE (chip-level intertwined metal and active temperature estimator)

  • Author

    Labun, Andrew ; Reeve, Timothy

  • Author_Institution
    Hewlett-Packard, Shrewsbury, MA, USA
  • fYear
    2003
  • fDate
    3-5 Sept. 2003
  • Firstpage
    23
  • Lastpage
    26
  • Abstract
    ULSI interconnect temperature is critical for electromigration risk assessment because of the exponential dependence of lifetime on temperature and for performance issues such as timing which are sensitive to temperature-dependent resistance. Steady state wire temperature is a function of Joule self-heating within the wire, heat conducted along the wire, and heat coupled from the active devices and other nearby wires through the dielectric. Chip-level estimates of wire temperatures for HP´s EV79 microprocessor require rapid processing of vast circuits and thus detailed physical calculations such as those based on 3D finite element models (FEM) are inappropriate. However, temperatures on such large devices can be accurately estimated at the resolution of individual segments of wire as extracted by geometric processing of the layout given each segment´s relevant geometry, connectivity to other segments, current I/sub rms/, and the thermal conductances G/sup lat/ between them.
  • Keywords
    ULSI; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; microprocessor chips; thermal analysis; thermal conductivity; timing; CLIMATE; Joule self-heating; ULSI interconnect temperature; active temperature estimator; coupled heat; electromigration risk assessment; interconnect segment geometry; metal temperature estimator; microprocessor; segment connectivity; segment thermal conductance; steady state wire temperature; temperature-dependent resistance; timing; Coupling circuits; Electromigration; Integrated circuit interconnections; Risk management; Steady-state; Temperature dependence; Temperature sensors; Timing; Ultra large scale integration; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7826-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2003.1233628
  • Filename
    1233628