Scaling laws for the resistivity increase of sub-100 nm interconnects

Author

Steinhoegl, W. ; Schindler, G. ; Steinlesberger, G. ; Traving, M. ; Engelhardt, M.

Author_Institution

Corporate Res., Infineon Technol. AG, Muenchen, Germany

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

27

Lastpage

30

Abstract

A physically based model is used to describe the resistivity increase of sub-100 nm copper interconnect structures. The main factors determining the increase are additional scattering of electrons at the surface as well as at the grain boundaries of the conductor. The model has been applied to several sets of experimental data. The parameters of the model, each of them with physical meaning, are appropriate to fit the model to the experimental data very well. A compact model for the surface contribution of the model has been derived capturing the essentials in a simple, analytical expression.

Keywords

contact resistance; copper; grain boundaries; integrated circuit interconnections; integrated circuit modelling; size effect; 100 nm; Cu; Cu sub-100 nm interconnects; compact model; grain boundaries; resistivity increase; scaling laws; surface contribution; Conductivity; Copper; Electrons; Grain boundaries; Integrated circuit interconnections; Scattering; Solid modeling; Surface fitting; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233629

Filename

1233629