Title :
Photoresist flow simulation using the viscous flow model
Author :
Chung, Won-Young ; Kim, Tai-Kyung ; Kim, Young-Tae ; Hwang, Byung-Joon ; Park, Young-Kwan ; Kong, Jeong-Taek
Abstract :
The PR (photoresist) flow process, applied to contact patterning, is difficult to predict and optimize because a process model does not exist. In this paper, the PR flow simulation method, using a viscous flow model, is developed and applied to examine the effect of initial shape and process conditions on the PR flow phenomena. In addition, this model is used to optimize the layout with the various contacts in the real pattern. This PR flow model, linked to lithography and etch ones, can predict and optimize the contact patterning process in cell, periphery, and TEG (test element group) areas and analyze defects, considering the pre-/post-processes, systematically.
Keywords :
circuit optimisation; etching; integrated circuit layout; photolithography; photoresists; plastic flow; semiconductor process modelling; surface tension; PR flow process; contact patterning; defects analysis; etch model; layout optimization; lithography model; photoresist flow simulation; surface tension; test element groups; viscous flow model; Computer aided engineering; Etching; Lithography; Navier-Stokes equations; Predictive models; Research and development; Resists; Solid modeling; Surface tension; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233633
