Calibration of hole scattering rates in silicon with a large set of experimental data including high voltage quantum yield, drain disturb and substrate hole injection

In this paper we present an extensive calibration of hole scattering rates in silicon by comparing simulations with a large set of experimental data including high voltage quantum yield, and, for the first time, hole gate current during drain stress of non volatile memory cells, and substrate hot hole injection for both homogeneous injection (Ning´s experiment) and impact ionization feedback (hole CHISEL). The proposed model is compared to the models of Jallepalli et al. (1997) and Kamakura et al. (2000). It is demonstrated that the inclusion of data sensitive to the high energy part of the hole distribution function points out that previously proposed models are not able to reproduce experimental data when very high fields are present, and allows to find more accurate scattering rates.